NTE185Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 40 W, TO-126, Through Hole

About the NTE185

The NTE185 from NTE Electronics is a bipolar (bjt) single transistor, pnp, 80 v, 4 a, 40 w, to-126, through hole. Key specifications include power dissipation pd of 40 W, transistor case style of TO-126, collector emitter voltage max of 80 V, operating temperature max of 150 °C. CES Engineering supplies this part with volume pricing and a quotation within 24 hours. Submit a request with your quantity for current pricing and availability.

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